BN1A4M pdf, BN1A4M подробное описание детали, BN1A4M датащи, BN1A4M view ::: ALLDATASHEET :::

номер детали	BN1A4M

подробное описание детали	The BN1A4M is designed for use in medium speed switching circuit.

объем файла	136.72 Kbytes

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производитель	NEC [NEC]

домашняя страница	http://www.nec.com/

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Аналогичный номер детали - BN1A4M

производитель	номер детали	датащи	подробное описание детали
NEC	BN1A4P	125Kb / 2P	PNP SILICON TRANSISTOR
NEC	BN1A4Z	106Kb / 4P	on-chip resistor PNP silicon epitaxial transistor For mid-speed switching
Renesas Technology Corp	BN1A4Z	261Kb / 6P	on-chip resistor PNP silicon epitaxial transistor For mid-speed switching 2002

производитель	номер детали	датащи	подробное описание детали
Samsung semiconductor	KA3361B	78Kb / 4P	THE KA3361B IS DESIGNED FOR USE IN FM DUAL CONVERSION COMMUNICATION.
NEC	AA1F4M	129Kb / 2P	The AA1F4M is designed for use medium speed switching circuit.
	BN1F4M	133Kb / 2P	The BN1F4M is designed for use in medium speed switching circuit.
	BN1F4N	130Kb / 2P	The BN1F4N is esiged for use in medium speed switching circuit.
E-Tech Electronics LTD	GBAV151	312Kb / 2P	The GBAV151 is designed for ultra high speed switching application
	GBAV152	313Kb / 2P	The GBAV152 is designed for ultra high speed switching application
	GDMBD2004	225Kb / 2P	The GDMBD2004 is designed for ultra high speed switching
	GP202K	173Kb / 2P	The GP202K is designed for ultra high speed switching.
	GPN2222A	140Kb / 3P	The GPN2222A is designed for general purpose amplifier and high speed, medium-power switching applications.
	GPN2907A	230Kb / 2P	The GPN2907A is designed for general purpose amplifier and high speed, medium-power switching applications