2SD662B pdf, 2SD662B подробное описание детали, 2SD662B датащи, 2SD662B view ::: ALLDATASHEET :::

номер детали	2SD662B

подробное описание детали	For High Breakdown Voltage General Amplification

объем файла	72.2 Kbytes

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производитель	PANASONIC [Panasonic Semiconductor]

домашняя страница	http://www.panasonic.com/industrial/

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Аналогичный номер детали - 2SD662B

производитель	номер детали	датащи	подробное описание детали
Panasonic Semiconductor	2SD662B	39Kb / 2P	Silicon NPN epitaxial planer type(For high breakdown voltage general amplification)

производитель	номер детали	датащи	подробное описание детали
Panasonic Semiconductor	2SB1220	36Kb / 2P	Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
	2SB1463	36Kb / 2P	Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
	2SB792	37Kb / 2P	Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
	2SC1573	47Kb / 3P	Silicon NPN triple diffusion planer type(For high breakdown voltage general amplification)
	2SC2632	34Kb / 2P	Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)
	2SC3941	47Kb / 3P	Silicon NPN triple diffusion planer type(For high breakdown voltage general amplification)
	2SD662	39Kb / 2P	Silicon NPN epitaxial planer type(For high breakdown voltage general amplification)
	2SA0921	71Kb / 3P	For high breakdown voltage low-noise amplification Complementary
	2SB0788	69Kb / 3P	For High Breakdown Voltage Low-noise Amplification
	2SB0792	71Kb / 3P	For High Breakdown Voltage Low-noise Amplification