IRHG6110 pdf, IRHG6110 подробное описание детали, IRHG6110 датащи, IRHG6110 view ::: ALLDATASHEET :::

номер детали	IRHG6110

подробное описание детали	100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY

объем файла	195.17 Kbytes

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производитель	IRF [International Rectifier]

домашняя страница	http://www.irf.com

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Аналогичный номер детали - IRHG6110

производитель	номер детали	датащи	подробное описание детали
Intersil Corporation	JANSR2N7272	39Kb / 7P	8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET June 1998
	JANSR2N7399	44Kb / 8P	11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power MOSFET June 1998
	JANSR2N7405	44Kb / 8P	25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET June 1998
	JANSR2N7410	45Kb / 8P	3.5A, 100V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET March 1998
	JANSR2N7411	45Kb / 8P	2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET June 1998
International Rectifier	IRFG5110	394Kb / 12P	100V, Combination 2N-2P-CHANNEL
	IRHNJ7130	109Kb / 8P	100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
	IRHQ567110	199Kb / 14P	RADIATION HARDENED 100V, COMBINATION 2N-2P-CHANNEL POWER MOSFET SURFACE MOUNT (LCC-28)
	IRHG567110	182Kb / 14P	RADIATION HARDENED POWER MOSFET THRU-HOLE 100V, Combination 2N-2P-CHANNEL
	IRFG5210	191Kb / 12P	200V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY