IXKR47N60C5 pdf, IXKR47N60C5 подробное описание детали, IXKR47N60C5 датащи, IXKR47N60C5 view ::: ALLDATASHEET :::

номер детали	IXKR47N60C5

подробное описание детали	Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge

объем файла	137.19 Kbytes

Html View	1 2 3 4

производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

Logo

Аналогичный номер детали - IXKR47N60C5

производитель	номер детали	датащи	подробное описание детали
IXYS Corporation	IXKR40N60	46Kb / 2P	CoolMOS Power MOSFET in ISOPLUS247 Package
IXYS Corporation	IXKR40N60C	46Kb / 2P	CoolMOS Power MOSFET in ISOPLUS247 Package
Inchange Semiconductor ...	IXKR40N60C	364Kb / 2P	N-Channel MOSFET Transistor

производитель	номер детали	датащи	подробное описание детали
IXYS Corporation	IXFR38N80Q2	568Kb / 5P	Electrically Isolated Back Surface
	IXKH30N60C5	112Kb / 4P	CoolMOS Power MOSFET N-Channel Enhancement Mode Low Rdson, High Vdss MOSFET
	IXKH35N60C5	114Kb / 4P	N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge
	IXKC25N80C	119Kb / 4P	N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface
	IXKC15N60C5	119Kb / 4P	Electrically isolated back surface Electrically isolated back surface
	IXGC16N60B2	92Kb / 2P	Electrically Isolated Back Surface
	MKE11R600DCGFC	260Kb / 6P	Electrically isolated back surface 2500 V electrical isolation
	DSS20-01AC	121Kb / 4P	Electrically Isolated Back Surface
	DSEE8-06CC	65Kb / 2P	Electrically Isolated Back Surface
	IXKC19N60C5	120Kb / 4P	Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge