NE5511279A pdf, NE5511279A подробное описание детали, NE5511279A датащи, NE5511279A view ::: ALLDATASHEET :::

номер детали	NE5511279A

подробное описание детали	NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

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производитель	NEC [NEC]

домашняя страница	http://www.nec.com/

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Аналогичный номер детали - NE5511279A

производитель	номер детали	датащи	подробное описание детали
California Eastern Labs	NE5511279A	296Kb / 4P	7.5 V UHF BAND RF POWER SILICON LD-MOS FET
California Eastern Labs	NE5511279A	297Kb / 4P	NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
Renesas Technology Corp	NE5511279A	272Kb / 10P	SILICON POWER MOS FET 2003
California Eastern Labs	NE5511279A-A	297Kb / 4P	NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
Renesas Technology Corp	NE5511279A-T1	272Kb / 10P	SILICON POWER MOS FET 2003

производитель	номер детали	датащи	подробное описание детали
Mitsubishi Electric Sem...	2SK2974	29Kb / 3P	RF POWER MOS FET(VHF/UHF power amplifiers)
Mitsubishi Electric Sem...	2SK2975	29Kb / 3P	RF POWER MOS FET(VHF/UHF power amplifiers)
NEC	NE5520279A	166Kb / 7P	NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
California Eastern Labs	NE552R479A	495Kb / 9P	NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET 08/11/2003
	NE5520379A	390Kb / 9P	NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET
	UPD5702TU	176Kb / 4P	NECs 2.4 GHz Si LD MOS POWER AMPLIFIER
	NE5511279A	296Kb / 4P	7.5 V UHF BAND RF POWER SILICON LD-MOS FET
	NE5531079A	382Kb / 8P	7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
	NE5511279A-A	297Kb / 4P	NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
Renesas Technology Corp	NE5531079A	240Kb / 11P	7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS