IPB60R060C7 pdf, IPB60R060C7 подробное описание детали, IPB60R060C7 датащи, IPB60R060C7 view ::: ALLDATASHEET :::

номер детали	IPB60R060C7

подробное описание детали	CoolMOS??C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.

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производитель	INFINEON [Infineon Technologies AG]

домашняя страница	http://www.infineon.com

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Аналогичный номер детали - IPB60R060C7

производитель	номер детали	датащи	подробное описание детали
Inchange Semiconductor ...	IPB60R060C7	244Kb / 2P	Isc N-Channel MOSFET Transistor

производитель	номер детали	датащи	подробное описание детали
Infineon Technologies A...	SPP17N80C3	401Kb / 10P	CoolMOS Power Transistor Features New revolutionary high voltage technology Rev. 2.9 2008-10-15
	IPB65R045C7	1Mb / 15P	650V CoolMOS??C7 Power Transistor Rev.2.0,2013-04-18
	IPB65R225C7	1Mb / 15P	650V CoolMOS??C7 Power Transistor Rev.2.0,2013-04-18
	IPL65R130C7	1Mb / 15P	650V CoolMOS??C7 Power Transistor Rev.2.0,2013-04-29
	IPL65R230C7	1Mb / 15P	650V CoolMOS??C7 Power Transistor Rev.2.0,2013-04-29
	IPP65R045C7	1Mb / 15P	650V CoolMOS??C7 Power Transistor Rev.2.0,2013-04-18
	IPP65R225C7	1Mb / 15P	650V CoolMOS??C7 Power Transistor Rev.2.0,2013-04-18
	IPW65R019C7	1Mb / 15P	650V CoolMOS??C7 Power Transistor Rev.2.1
	IPZ65R019C7	1Mb / 15P	650V CoolMOS??C7 Power Transistor Rev.2.0
	IPB60R120C7	1Mb / 15P	CoolMOS??C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Rev.2.0,2015-11-30