| производитель | номер детали | датащи | подробное описание детали |
 Toshiba Semiconductor |
2SK3130
|
203Kb / 6P |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
06-Jul-2004 |
|
2SK3342
|
129Kb / 3P |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSV)
25-Jan-2002 |
|
2SK3387
|
216Kb / 6P |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV)
22-Jul-2002 |
|
2SK2312
|
244Kb / 6P |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV)
06-Feb-2002 |
|
2SK2312
|
715Kb / 6P |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−??MOSV)
|
|
2SJ567
|
184Kb / 6P |
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (MOSV)
|
|
2SJ567(TE16L1,NQ)
|
182Kb / 6P |
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (-MOSV)
|
|
2SK3565
|
218Kb / 6P |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type, π-MOSIV
2013-11-01 |
|
2SK4106
|
181Kb / 6P |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2009-09-29 |
|
K4110
|
199Kb / 6P |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2009-09-29 |