| производитель | номер детали | датащи | подробное описание детали |
Siemens Semiconductor G... |
BF997
|
115Kb / 7P |
Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations)
|
Rohm |
BAL6309
|
346Kb / 4P |
SPURIOUS V-PLUSE GENERATOR
|
Bourns Electronic Solut... |
FB73-085-RC
|
488Kb / 2P |
Excellent EMI suppression
|
Linear Technology |
LTC6945
|
378Kb / 28P |
Ultralow Noise and Spurious 0.35GHz to 6GHz Integer-N Synthesizer
|
|
LTC6947
|
948Kb / 10P |
Ultralow Noise and Spurious Fractional-N Synthesizer
|
Renesas Technology Corp |
F1951
|
2Mb / 23P |
Glitch-FreeTM, < 0.6 dB transient overshoot Spurious Free Design
|
|
IDTF1950
|
2Mb / 20P |
Spurious Free Design Attenuation Error < 0.3 dB @ 2 GHz
|
Murata Manufacturing Co... |
NFL18ST207X1C3
|
288Kb / 3P |
Steep insertion loss characteristics realize excellent noise suppression and prevent distortion of signal waveform.
Last updated07/26/2022 |
|
NFL18ST307X1C3
|
288Kb / 3P |
Steep insertion loss characteristics realize excellent noise suppression and prevent distortion of signal waveform.
Last updated07/26/2022 |
|
NFL18ST507X1C3
|
288Kb / 3P |
Steep insertion loss characteristics realize excellent noise suppression and prevent distortion of signal waveform.
Last updated07/26/2022 |
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