Description
The device is manufactured in low voltage NPN planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.

Features
■ Very low collector to emitter saturation voltage
■ DC current gain, hFE > 100
■ 3 A continuous collector current
■ 40 V breakdown voltage V(BR)CER

Applications
■ Heavy load driver