Description
This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. AM15540v2 5 6 7 8 1 2 3 4 Top View D(5, 6, 7, 8) G(4) S(1, 2, 3) PowerFLAT™ 5x6 HV 1 2 3 4

Features
■ Outstanding RDS(on)*area
■ Extremely large avalanche performance
■ Gate charge minimized
■ Very low intrinsic capacitance
■ 100% avalanche tested

Applications
■ Switching applications