Description
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. This IGBT series offers the optimum
compromise between conduction and switching
losses, maximizing the efficiency of very high
frequency converters. Furthermore, a positive
VCE(sat) temperature coefficient and very tight
parameter distribution result in easier paralleling
operation.

Features
• High speed switching
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Short circuit rated
• Ultrafast soft recovery antiparallel diode

Applications
• Inverter
• UPS
• PFC