Description
The STAC4932B is an N-channel MOS field-effect RF power transistor. It is intended for 100 V pulse applications up to 250 MHz. This device is suitable for use in industrial, scientific and medical applications. The STAC4932B benefits from the latest generation of efficient, patent-pending STAC® package technology. 1 1 2 3 3 1. Drain 3. Gate 2. Source (bottom side) STAC244B Air cavity

Features
■ Excellent thermal stability
■ Common source push-pull configuration
■ POUT = 1000 W min. (1200 W typ.) with 26 dB gain @ 123 MHz
■ Pulse conditions: 1 msec - 10%
■ In compliance with the 2002/95/EC European directive
■ ST air-cavity STAC® packaging technology