Description
The LET9060F is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9060F is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for base station applications requiring high linearity.

Features
■ Excellent thermal stability
■ Common source configuration
■ POUT (@ 28 V)= 60 W with 18 dB gain @ 945 MHz
■ POUT (@ 36 V)= 90 W with 18 dB gain @ 945 MHz
■ BeO free package
■ In compliance with the 2002/95/EC european directive