DESCRIPTION
NECs NE681 series of NPN epitaxial silicon transistors are designed for low noise, high gain, low cost amplifier applications. Both the chip and micro-x versions are suitable for amplifier applications up to 4 GHz. The NE681 die is also available in six different low cost plastic surface mount package styles. NE681s unique device characteristics allow you to use a single matching point to simultaneously achieve both low noise and high gain.

FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz
• LOW NOISE FIGURE:
    1.2 dB at 1 GHz
    1.6 dB at 2 GHz
• HIGH ASSOCIATED GAIN:
    15 dB at 1 GHz
    12 dB at 2 GHz
• LOW COST