| производитель | номер детали | датащи | подробное описание детали |
 Infineon Technologies A... |
PXAC203302FV
|
1Mb / 8P |
Thermally-Enhanced High Power RF LDMOS FET 330 W, 28 V, 1880 ??2025 MHz
Rev. 02.1, 2016-06-22 |
|
PTVA120501EA
|
1Mb / 10P |
Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 ??1400 MHz
Rev. 02.1, 2016-05-26 |
|
PTVA082407NF
|
453Kb / 9P |
Thermally-Enhanced High Power RF LDMOS FET 240 W, 48 V, 746 ??821 MHz
Rev. 02.5, 2017-07-18 |
 Cree, Inc |
PTRA094252FC
|
497Kb / 9P |
Thermally-Enhanced High Power RF LDMOS FET 208 W, 48 V, 746 ??960 MHz
|
|
PTVA082407NF
|
639Kb / 9P |
Thermally-Enhanced High Power RF LDMOS FET 240 W, 48 V, 746 ??821 MHz
|
|
PTVA120501EA
|
683Kb / 10P |
Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 ??1400 MHz
|
|
PTFB072707FH
|
699Kb / 10P |
Thermally-Enhanced High Power RF LDMOS FET 270 W, 28 V, 728 ??768 MHz
|
|
PTRA093302FC
|
482Kb / 8P |
Thermally-Enhanced High Power RF LDMOS FET 330 W, 50 V, 746 ??768 MHz
|
|
PXAC203302FV
|
436Kb / 8P |
Thermally-Enhanced High Power RF LDMOS FET 330 W, 28 V, 1880 - 2025 MHz
|
 WOLFSPEED, INC. |
PTVA120501EA
|
695Kb / 10P |
Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 – 1400 MHz
Rev. 04, 2023-07-10 |