| производитель | номер детали | датащи | подробное описание детали |
 Toshiba Semiconductor |
HN4C05JU
|
166Kb / 3P |
MULTI CHIP DISCRETE DEVICE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS FOR MUTING AND SWITCHING APPLICATIONS)
|
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HN7G01FU
|
185Kb / 5P |
TOSHIBA Multi Chip Discrete Device
|
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TPCP8J01
|
189Kb / 5P |
TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type
|
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TPCF8B01
|
81Kb / 4P |
TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode
|
 Littelfuse |
P1200S_L
|
146Kb / 3P |
LCAS Asymmetrical Discrete Device
|
 Toshiba Semiconductor |
TPCP8J01
|
311Kb / 9P |
TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type
|
|
HN2E01F
|
506Kb / 7P |
MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application
|
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HN2E04F
|
523Kb / 8P |
MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application
|
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HN2E05J
|
250Kb / 6P |
MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application
|
|
HN7G02FU
|
163Kb / 6P |
Multi Chip Discrete Device
|