Description
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in onresistance and ultra-low gate charge for applications requiring superior power density and high efficiency. AM15540v1 5 6 7 8 1 2 3 4 Top View D(5, 6, 7, 8) G(4) S(1, 2, 3) PowerFLAT™ 5x6 VHV 1 2 3 4

Features
■ Industry’s lowest RDS(on) x area
■ Industry’s best figure of merit (FoM)
■ Ultra low gate charge
■ 100% avalanche tested
■ Zener protected

Applications
■ Switching applications