Product Brief
The BFP420F is a low noise wideband NPN bipolar RF transistor. The collector design supports voltages up to VCEO = 4.5 V and currents up to IC = 60 mA. The device is especially suited for mobile applications in which low power consumption is a key requirement. The typical transition frequency is approximately 25 GHz, hence the device offers high power gain at frequencies up to 4.5 GHz in amplifier applications. The device is housed in a thin small flat plastic package with visible leads.

Features
• General purpose low noise NPN bipolar RF transistor
• Based on Infineon´s reliable very high volume 25 GHz silicon bipolar technology
• 0.95 dB minimum noise figure typical at 900 MHz, 3 V, 4 mA
• 16.5 dB maximum gain (Gma) typical at 2.4 GHz, 3 V, 15 mA
• 28 dBm OIP3 typical at 2.4 GHz, 4 V, 40 mA
• 16.5 dBm OP1dB typical at 2.4 GHz, 4 V, 40 mA
• Popular in discrete oscillators
• Thin, small, flat, Pb-free (RoHS compliant) and Halogen-free package with visible leads
• Qualification report according to AEC-Q101 available

Applications
As Low Noise Amplifier (LNA) in
• Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB)
• Multimedia applications such as mobile/portable TV, CATV, FM Radio
• ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications