DESCRIPTION:
These power transistors are produced by PPCs DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications.

FEATURES:
• Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp
• High Gain Characteristics: hFE @ IC = 250 mA: 30-100
• Excellent Safe Area Limits
• Low Collector Cutoff Current: 100 nA (Max) 2N3740A

APPLICATIONS:
• Drivers
• Switches
• Medium-Power Amplifiers