GENERAL DESCRIPTION
The MT28F160C3 is a nonvolatile, electrically blockerasable (flash), programmable, read-only memory containing 16,777,216 bits organized as 1,048,576 words (16 bits).
The MT28F160C3 is manufactured on 0.22µm process technology in a 48-ball FBGA package. The device has an I/O supply of 2.7V (MIN). Programming in production is accomplished by using high voltage which can be supplied on a separate line.

FEATURES
• Thirty-nine erase blocks:
    Eight 4K-word parameter blocks
    Thirty-one 32K-word main memory blocks
• VCC, VCCQ and VPP voltages:
    2.7V–3.3V VCC
    2.7V–3.3V VCCQ*
    1.65V–3.3V and 12V VPP
• Address access times:
    90ns, 110ns at 2.7V–3.3V
• Low power consumption:
    Standby and deep power-down mode < 1µA (typical ICC)
    Automatic power saving feature (APS mode)
• Enhanced WRITE/ERASE SUSPEND (1µs typical)
• 128-bit OTP area for security purposes
• Industry-standard command set compatibility
• Software/hardware block protection