DESCRIPTION
This new series of Low Charge Power HEXFETs achieve significantly lower gate charge over conventional HEXFETs. Utilizing advanced Power MOSFET technology, the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability that are characteristic of HEXFETs offer the designer a new standard in power transistors for switching applications.

• Ultra Low Gate Charge
• Reduced Gate Drive Requirement
• Enhanced 30 V VGS Rating
• Isolated Package
• High Voltage Isolation = 2.5KVRMS
• Sink to Lead Creepage Dist.=4.8mm
• Repetitve Avalanche Rated