1024K (128K x 8) CMOS FLASH MEMORY

Intel’s M28F010 is a 1024-Kbit byte-wide, in-system re-writable, CMOS nonvolatile flash memory. It is organized as 131,072 bytes of 8 bits and is available in a 32-pin hermetic CERDIP package. The M28F010 is also available in 32-contact leadless chip carrier, J-lead, and Flatpack surface mount packages. It offers the most cost-effective and reliable alternative for updatable nonvolatile memory. The M28F010 adds electrical chip-erasure and reprogramming to EPROM technology. Memory contents of the M28F010 can be erased and reprogrammed 1) in a socket; 2) in a PROM programmer socket; 3) on-board during subassembly test; 4) insystem during final test; and 5) in-system after-sale.

■ Flash Electrical Chip-Erase
   — 5 Second Typical
■ Quick-Pulse Programming Algorithm
   — 10 μs Typical Byte-Program
   — 2 Second Typical Chip-Program
■ Single High Voltage for Writing and Erasing
■ CMOS Low Power Consumption
   — 30 mA Maximum Active Current
   — 100 μA Maximum Standby Current
■ Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface
■ Noise Immunity Features
   — ±10% VCC Tolerance
   — Maximum Latch-Up Immunity through EPI Processing
■ ETOX-III Flash-Memory Technology
   — EPROM-Compatible Process Base
   — High-Volume Manufacturing Experience
■ Compatible with JEDEC-Standard Byte-Wide EPROM Pinouts
■ 10,000 Program/Erase Cycles Minimum
■ Available in Three Product Grades:
   — QML: -55°C to +125°C (TC)
   — SE2: -40°C to +125°C (TC)
   — SE3: -40°C to +110°C (TC)