Description
The ATF-44101 is a gallium arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 8 GHz frequency range. This nominally .5␣ micron gate length GaAs FET is an interdigitated four-cell structure using airbridge interconnects between source fingers. Total gate periphery is 5 millimeters. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.

Features
• High Output Power: 32.0 dBm Typical P 1 dB at 4 GHz
• High Gain at 1 dB Compression: 8.5 dB Typical G 1 dB at 4 GHz
• High Power Efficiency: 35% Typical at 4 GHz
• Hermetic Metal-Ceramic Stripline Package