| производитель | номер детали | датащи | подробное описание детали |
 Mitsubishi Electric Sem... |
PD8XX2
|
167Kb / 3P |
InGaAs AVALANCHE PHOTO DIODES
|
|
PD8XX3
|
128Kb / 3P |
InGaAs AVALANCHE PHOTO DIODES
|
|
PD839C4
|
48Kb / 2P |
InGaAs AVALANCHE PHOTO DIODES
|
 California Eastern Labs |
NDL5531P
|
47Kb / 5P |
1000 to 1600 nm OPTICAL FIBER COMMUNICATIONS 30um InGaAs AVALANCHE PHOTO DIODE MODULE
|
 Mitsubishi Electric Sem... |
PD8XX2
|
71Kb / 3P |
InGaAs AVALANCHE PHOTO DIODES
|
 Renesas Technology Corp |
NR8800FS-CB
|
206Kb / 10P |
? 80 關m InGaAs AVALANCHE PHOTO DIODE MODULE FOR OTDR APPLICATIONS
|
 California Eastern Labs |
NR6800
|
252Kb / 8P |
80 um InGaAs AVALANCHE PHOTO DIODE FOR OTDR APPLICATIONS
|
|
NR6300EZ
|
246Kb / 7P |
??30 ?춎 InGaAs AVALANCHE PHOTO DIODE FOR OTDR APPLICATIONS
|
 Renesas Technology Corp |
NR8800FS-CB
|
206Kb / 10P |
? 80 關m InGaAs AVALANCHE PHOTO DIODE MODULE FOR OTDR APPLICATIONS
|
|
PL10702EJ03V0DS
|
206Kb / 10P |
? 80 關m InGaAs AVALANCHE PHOTO DIODE MODULE FOR OTDR APPLICATIONS
|