General description
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.

Features and benefits
■ Low collector-emitter saturation voltage VCEsat
■ Optimized switching time
■ High collector current capability IC and ICM
■ High collector current gain (hFE) at high IC
■ High efficiency due to less heat generation
■ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

Applications
■ DC-to-DC conversion
■ Battery-driven devices
■ Power management
■ Charging circuits