DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

. . . designed for general–purpose amplifier and low–speed switching applications.

FEATURES:
• Collector–Emitter Sustaining Voltage -
   VCEO(sus) = 60 V (Min) – 2N6040, 2N6043
                      = 80 V (Min) – 2N6041, 2N6044
                      = 100 V (Min) – 2N6042, 2N6045
• Collector–Emitter Saturation Voltage
   VCE(sat) = 2.0 V (Max) @ IC = 4.0 A – 2N6040, 41, 2N6043, 44
                   = 2.0 V (Max) @ IC = 4.0 A – 2N6042, 2N6045
• Monolithic Construction with Built–In Base–Emitter Shunt Resistors