Power Field Effect Transistor DPAK for Surface Mount

N–Channel Enhancement–Mode Silicon Gate

This TMOS Power FET is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers.

• Silicon Gate for Fast Switching Speeds

• Low RDS(on) — 0.3 Ω Max

• Rugged — SOA is Power Dissipation Limited

• Source–to–Drain Diode Characterized for Use With Inductive Loads

• Low Drive Requirement — VGS(th) = 4.0 V Max

• Surface Mount Package on 16 mm Tape