NPN Silicon Power Transistors SWITCHMODE Bridge Series

. . . specifically designed for use in half bridge and full bridge off line converters.

• Excellent Dynamic Saturation Characteristics
• Rugged RBSOA Capability
• Collector–Emitter Sustaining Voltage — VCEO(sus) — 400 V
• Collector–Emitter Breakdown — V(BR)CES — 650 V
• State–of–Art Bipolar Power Transistor Design
• Fast Inductive Switching:
    tfi = 25 ns (Typ) @ 100
°C
    tc = 50 ns (Typ) @ 100
°C
    tsv = 1 µs (Typ) @ 100
°C
• Ultrafast FBSOA Specified
• 100°C Performance Specified for:
    RBSOA
    Inductive Load Switching
    Saturation Voltages
    Leakages