Complementary Darlington Silicon Power Transistors
   
. . . designed for use as general purpose amplifiers, low frequency switching and motor control applications.
   
• High dc Current Gain @ 10 Adc — hFE = 400 Min (All Types)
• Collector–Emitter Sustaining Voltage
                VCEO(sus) = 150 Vdc (Min) – MJ11018, 17
                                   = 250 Vdc (Min) – MJ11022, 21
• Low Collector–Emitter Saturation
                VCE(sat) = 1.0 V (Typ) @ IC = 5.0 A
                                = 1.8 V (Typ) @ IC = 10 A
• Monolithic Construction
• 100% SOA Tested @ VCE = 44 V, IC = 4.0 A, t = 250 ms.