The RF Line

UHF Silicon FET Power Amplifier

Designed specifically for the Pan European Digital Extended EGSM base station applications at 925 – 960 MHz. The MHW930 operates from a 26 volt supply and requires 60 mW of RF input power.

• Specified 26 Volt and 25 °C Characteristics:

   RF Input Power: 60 mW Max

   RF Power Gain: 27 dB Min at 30 W Output Power

   RF Output: 30 Watts Min at 1.0 dB Compression Point

   Efficiency: 44% Min at 30 Watts Output Power

• 50 Ohm Input/Output Impedances