Description
The CXK58512TM/M is a high speed CMOS static RAM organized as 65536-words by 8 bits.
A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability.
Special feature are low power consumption, high speed.
The CXK58512TM/M is a suitable RAM for portable equipment with battery back up.

Features
• Fast access time (Access time)
                       -55LL 55ns (Max.)
                       -70LL 70ns (Max.)
                     -10LL 100ns (Max.)
• Low standby current 10µA (Max.)
• Low data retention current 6µA (Max.)
• Single +5V supply: +5V ± 10%
• Low voltage data retention: 2.0V (Min.)
• Broad package line-up
    CXK58512TM 8mm × 20mm 32 pin TSOP package
    CXK58512M 525mil 32 pin SOP Package

Function
    65536-word × 8 bit static RAM