| производитель | номер детали | датащи | подробное описание детали |
 Samsung semiconductor |
K7I643682M
|
417Kb / 18P |
2Mx36 & 4Mx18 DDRII CIO b2 SRAM
|
 Integrated Silicon Solu... |
IS61DDP2B21M18A
|
534Kb / 31P |
1Mx18, 512Kx36 18Mb DDR-IIP (Burst 2) CIO SYNCHRONOUS SRAM
|
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IS61DDP2B22M18A
|
534Kb / 31P |
2Mx18, 1Mx36 36Mb DDR-IIP (Burst 2) CIO SYNCHRONOUS SRAM
|
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IS61DDP2B42M18A
|
578Kb / 32P |
2Mx18, 1Mx36 36Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM
|
|
IS61DDP2B44M18A
|
549Kb / 32P |
4Mx18, 2Mx36 72Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM
|
|
IS61DDPB21M18A
|
527Kb / 31P |
1Mx18, 512Kx36 18Mb DDR-IIP(Burst 2) CIO SYNCHRONOUS SRAM
|
|
IS61DDPB22M18A
|
527Kb / 31P |
2Mx18, 1Mx36 36Mb DDR-IIP(Burst 2) CIO SYNCHRONOUS SRAM
|
|
IS61DDPB41M18A
|
574Kb / 32P |
1Mx18, 512Kx36 18Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM
|
|
IS61DDPB42M18A
|
573Kb / 32P |
2Mx18, 1Mx36 36Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM
|
|
IS61DDPB44M18A
|
545Kb / 32P |
4Mx18, 2Mx36 72Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM
|