Product Description
The LPT16ED is a silicon germanium low phase noise, high frequency NPN transistor for oscillator applications up to 16GHz.
The transistor exhibits low 1/f noise and provides +13 dBm typical output power at VCE of 3V and IC equal to 20 mA. It is easily operated from a single supply voltage with appropriate external passive components.
The silicon germanium technology used in this device provides outstanding high-frequency performance combined with high thermal conductivity and superior reliability under harsh operating and storage conditions.
A complete mechanical description of the transistor is available under SiGe Semiconductor Document 07MS001.

Features
◾ Low 1/f noise: -142 dBc/Hz at 100 Hz offset
◾ Phase noise: -167 dBc/Hz at 100 kHz offset
◾ Output power up to +13 dBm
◾ Operation down to 1 volt, 2 mA
◾ Gold bump pads for wire bond or flip chip (for direct die attachment)

Applications
◾ Low phase noise oscillators up to 16 GHz
◾ VCO’s, DRO’s and YIG oscillators
◾ Point-to-point radios
◾ Satellite communications
◾ Fiber optics, OC-192 and OC-768
◾ Local Multipoint Distribution Systems, LMDS