The HYM 324020S/GS-50/-60 is a 16 MByte DRAM module organized as 4 194 304 words by 32-bit in a 72-pin single-in-line package comprising eight HYB 5117400BJ 4M x 4 DRAMs in 300 mil wide SOJ-packages mounted together with eight 0.2 µF ceramic decoupling capacitors on a PC board.

The HYM 324020S/GS-50/-60 can also be used as a 8 388 608 words by 16-bits dynamic RAM module by means of connecting DQ0 and DQ16, DQ1 and DQ17, DQ2 and DQ18, …, DQ15 and DQ31, respectively.

Each HYB 5117400BJ is described in the data sheet and is fully electrical tested and processed according to SIEMENS standard quality procedure prior to module assembly. After assembly onto the board, a further set of electrical tests is performed.

The speed of the module can be detected by the use of four presence detect pins.

The common I/O feature on the HYM 324020S/GS-50/-60 dictates the use of early write cycles.

Advanced Information

• 4 194 304 words by 32-bit organization (alternative 8 388 608 words by 16-bit)

• Fast access and cycle time

   50 ns access time

   90 ns cycle time (-50 version)

   60 ns access time

   110 ns cycle time (-60 version)

• Fast page mode capability

   35 ns cycle time (-50 version)

   40 ns cycle time (-60 version)

• Single + 5 V (± 10 %) supply

• Low power dissipation

   max. 5280 mW active (HYM 324020S/GS-50)

   max. 4840 mW active (HYM 324020S/GS-60)

   CMOS – 44 mW standby

   TTL –88 mW standby

• CAS-before-RAS refresh

   RAS-only-refresh

   Hidden-refresh

• 8 decoupling capacitors mounted on substrate

• All inputs, outputs and clocks fully TTL compatible

• 72 pin Single in-Line Memory Module with 22.86 mm (900 mil) height

• Utilizes eight 4Mx4-DRAMs in 300mil wide SOJ packages

• 2048 refresh cycles / 32 ms

• Optimized for use in byte-write non-parity applications

• Tin-Lead contact pads (S - version)

• Gold contact pads (GS - version)