600 V - 25 A - IGBT High Speed Power Switching

Features

  Low collector to emitter saturation voltage

           VCE(sat)= 1.4 V typ. (at IC= 25 A, VGE= 15V, Ta = 25°C)

  Trench gate and thin wafer technology

  High speed switching

           tf= 90 ns typ. (at IC= 30 A, VCE= 400 V, VGE= 15 V, Rg = 5 , Ta = 25°C, inductive load)