BF1012 датащи(PDF) - Siemens Semiconductor Group

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BF1012 датащи (PDF) - Siemens Semiconductor Group

BF1012 Datasheet PDF - Siemens Semiconductor Group


номер детали	BF1012

скачать	BF1012 скачать

объем файла	33.42 Kbytes

Page	4 Pages

производитель	SIEMENS [Siemens Semiconductor Group]

домашняя страница	http://www.siemens.com/

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подробное описание детали

Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network

BF1012 Datasheet (PDF)

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BF1012 Datasheet PDF - Siemens Semiconductor Group


номер детали	BF1012

скачать	BF1012 Click to download

объем файла	33.42 Kbytes

Page	4 Pages

производитель	SIEMENS [Siemens Semiconductor Group]

домашняя страница	http://www.siemens.com/

Logo

подробное описание детали	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network

BF1012 датащи (HTML) - Siemens Semiconductor Group

BF1012 Datasheet HTML 1Page - Siemens Semiconductor Group

BF1012 Datasheet HTML 2Page - Siemens Semiconductor Group

BF1012 Datasheet HTML 3Page - Siemens Semiconductor Group

BF1012 Datasheet HTML 4Page - Siemens Semiconductor Group

BF1012 Информация о продукте

Silicon N-Channel MOSFET Tetrode

• For low noise, high gain controlled input stages up to 1GHz
• Operating voltage 12V
• Integrated stabilized bias network

Аналогичный номер детали - BF1012

производитель	номер детали	датащи	подробное описание детали
Siemens Semiconductor G...	BF1012S	43Kb / 4P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
Siemens Semiconductor G...	BF1012W	359Kb / 3P	SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz)

Аналогичное описание - BF1012

производитель	номер детали	датащи	подробное описание детали
Siemens Semiconductor G...	BF1005	51Kb / 4P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
	BF1005S	52Kb / 4P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
	BF1009S	51Kb / 4P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network)
	BF1012S	43Kb / 4P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
	BF1012W	359Kb / 3P	SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz)
	BF2030	16Kb / 2P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)
	BF2030W	16Kb / 2P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)
	BF2040	16Kb / 2P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)
	BF2040W	31Kb / 2P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)
	BF998	180Kb / 8P	Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)

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