DESCRIPTION
The LH28F800SG-L/SGH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F800SG-L/SGH-L can operate at VCC = 2.7 V and VPP = 2.7 V. Their low voltage operation capability realizes longer battery life and suits for cellular phone application.

FEATURES
• SmartVoltage technology
   – 2.7 V, 3.3 V or 5 V VCC
   – 2.7 V, 3.3 V, 5 V or 12 V VPP
• High performance read access time LH28F800SG-L70/SGH-L70
   – 70 ns (5.0±0.25 V)/80 ns (5.0±0.5 V)/
      85 ns (3.3±0.3 V)/100 ns (2.7 to 3.0 V)
      LH28F800SG-L10/SGH-L10
   – 100 ns (5.0±0.5 V)/100 ns (3.3±0.3 V)/
      120 ns (2.7 to 3.0 V)
• Enhanced automated suspend options
   – Word write suspend to read
   – Block erase suspend to word write
   – Block erase suspend to read
• Enhanced data protection features
   – Absolute protection with VPP = GND
   – Flexible block locking
   – Block erase/word write lockout during power transitions
• SRAM-compatible write interface
• High-density symmetrically-blocked architecture
   – Sixteen 32 k-word erasable blocks
• Enhanced cycling capability
   – 100 000 block erase cycles
   – 1.6 million block erase cycles/chip
• Low power management
   – Deep power-down mode
   – Automatic power saving mode decreases ICC in static mode
• Automated word write and block erase
   – Command user interface
   – Status register
• ETOXTM∗ V nonvolatile flash technology
• Packages
   – 48-pin TSOP TypeI (TSOP048-P-1220)
      Normal bend/Reverse bend
   – 48-ball CSP(FBGA048-P-0808)