| производитель | номер детали | датащи | подробное описание детали |
Infineon Technologies A... |
IPP16CN10N
|
624Kb / 12P |
OptiMOS짰2 Power-Transistor Excellent gate charge x RDS(on) product (FOM)
Rev. 1.01 2006-06-02 |
|
IPP086N10N3G
|
480Kb / 12P |
OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
Rev. 2.5 2010-07-16 |
|
IPP023NE7N3G
|
466Kb / 10P |
OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
Rev. 2.11 2009-11-11 |
|
IPP028N08N3G
|
463Kb / 10P |
OptiMOS짰3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
Rev. 1.0 2008-01-25 |
|
IPB107N20N3G
|
452Kb / 11P |
OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
Rev. 2.2 2009-10-21 |
|
IPB108N15N3G
|
438Kb / 11P |
OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
Rev. 2.1 2009-12-01 |
|
IPB600N25N3G
|
426Kb / 11P |
OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
Rev. 2.2 2009-10-23 |
|
IPB072N15N3G
|
424Kb / 11P |
OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
Rev. 2.06 2010-04-19 |
|
IPB08CN10NG
|
413Kb / 11P |
OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
Rev. 1.08 2010-04-26 |
Shanghai Leiditech Elec... |
LMP0218G
|
1Mb / 6P |
Excellent gate charge x RDS(on) product(FOM)
|
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