Product Description
The RF3120 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CDMA hand-held digital cellular equipment, spreadspectrum systems, and other applications in the 1750MHz to 1780MHz band. The RF3120 has a digital bias control voltage for low current in standby mode. The device is self-contained with 50Ω input and output that is matched to obtain optimum power, efficiency, and linearity characteristics. The module is an ultra-small 6mmx6mm land grid array with backside ground.

Features
• Input/Output Internally Matched @ 50Ω
• Single 3V Supply
• 29dBm Linear Output Power
• 26dB Linear Gain
• 32% Linear Efficiency

Typical Applications
• 3V CDMA Korean-PCS Handsets
• Spread-Spectrum Systems