| производитель | номер детали | датащи | подробное описание детали |
Renesas Technology Corp |
RJK0601DPN-E0
|
91Kb / 7P |
N-Channel MOS FET 60 V, 110 A, 3.1 m
|
|
RJK0601DPN-E0
|
91Kb / 7P |
N-Channel MOS FET 60 V, 110 A, 3.1 m?
|
ON Semiconductor |
FDB86566-F085
|
531Kb / 7P |
N-Channel PowerTrench MOSFET 60 V, 110 A, 2.7 m廓
August-2017, Rev. 2 |
|
NTBS2D7N06M7
|
247Kb / 7P |
N?륝hannel PowerTrench MOSFET 60 V, 110 A, 2.7 m
December, 2017 ??Rev. 0 |
|
NTMFD5C674NL
|
369Kb / 7P |
MOSFET ??Dual, N-Channel 60 V, 14.4 m, 42 A
May, 2019 ??Rev. P3 |
|
NTMFD5C680NL
|
362Kb / 7P |
MOSFET ??Power, Dual, N-Channel 60 V, 28 m, 26 A
May, 2019 ??Rev. P3 |
|
NVMFD5C672NL
|
231Kb / 7P |
MOSFET ??Power, Dual N-Channel 60 V, 11.9 m, 40 A
June, 2020 ??Rev. 3 |
|
NVMFD5C674NL
|
372Kb / 7P |
MOSFET ??Power, Dual N-Channel 60 V, 14.4 m, 42 A
December, 2020-Rev. P4 |
|
NVLJWD040N06CL
|
138Kb / 7P |
MOSFET - Power, Dual N-Channel 60 V, 38 m, 18 A
July, 2022 - Rev. 1 |
|
NVMJD015N06CL
|
255Kb / 6P |
MOSFET - Power, Dual N-Channel 60 V, 14.4 m, 35 A
September, 2022 - Rev. 2 |
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