General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS4032PT.

Features
■ Low collector-emitter saturation voltage VCEsat
■ Optimized switching time
■ High collector current capability IC and ICM
■ High collector current gain (hFE) at high IC
■ High energy efficiency due to less heat generation
■ AEC-Q101 qualified
■ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

Applications
■ DC-to-DC conversion
■ Battery-driven devices
■ Power management
■ Charging circuits