General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT89 (SC-62/TO-243) flat lead Surface-Mounted Device (SMD) plastic package.

NPN complement: 2PD2150.

Features
■ Low collector-emitter saturation voltage VCEsat
■ High collector current capability IC and ICM
■ High collector current gain (hFE) at high IC
■ High efficiency due to less heat generation
■ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

Applications
■ DC-to-DC conversion
■ MOSFET gate driving
■ Motor control
■ Charging circuits
■ Power switches (e.g. motors, fans)
■ Thin Film Transistor (TFT) backlight inverter