Description and Applications
The MA-COM MASW-000823-12770T is a SP2T, High Peak and Average Power, High Linearity, Common Anode, PIN diode LNA Protect Switch for TD-SCDMA(2010-2025 MHz) applications.
The device is provided in industry standard 3mm MLP plastic packaging. This device incorporates a PIN diode die fabricated with M/A-COM’s patented Silicon-Glass HMICTM process. This chip features two silicon pedestals embedded in a low loss, low dispersion glass. The diodes are formed on the top of each pedestal. The topside is fully encapsulated with silicon nitride and has an additional polymer passivation layer. These polymer protective coatings prevent damage and contamination during handling and assembly.

Features
• Exceptional Tx Loss = 0.35 dB Avg @ 2025 MHz, 20mA
• Exceptional Rx Loss = 0.50 dB Avg @ 2025 MHz, 20mA
• Higher Tx-Rx Isolation = 31dB Avg @ 2025 MHz, 20mA
• Higher RF C.W. Input Power =13 W C.W.(Tx-Ant Port)
• Higher RF Peak Power =+49.5 dBm, 5uS P.W.,1 % duty
• Higher IIP3=64 dBm (Tx-Ant Port )
• Lower EVM (OFDM): < 1.5 % @13W Pinc, (Tx-Ant Port)
• Surface Mount 3mm MLP Package, RoHS* Compliant