DESCRIPTION
The TC2876 is packaged with the TC1806 Pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs Power chip. The Cu-based ceramic package provides excellent thermal conductivity for the GaAs FET. All devices are 100% DC tested to assure consistent quality. Typical applications include high dynamic range power amplifiers for commercial and military high performance power applications.

FEATURES
• 5 W Typical Output Power at 6 GHz
• 7 dB Typical Linear Power Gain at 6 GHz
• High Linearity: IP3 = 47 dBm Typical at 6 GHz
• High Power Added Efficiency: Nominal PAE of 40 % at 6 GHz
• Suitable for High Reliability Application
• Breakdown Voltage: BVDGO ≥ 18 V
• Lg = 0.6 µm, Wg = 12 mm
• Tight Vp ranges control
• High RF input power handling capability
• 100 % DC Tested
• Low Cost Ceramic Package