DESCRIPTION
The STG719 is an high speed SPDT CMOS SWITCH frabricated in silicon gate C2MOS technology. It is designed to operate from 1.8V to 5.5V, making this device ideal for portable applications. It offers 4Ω ON-Resistance Max at 5V 25°C. Additional key features are fast switching speed (tON=7ns, tOFF=4.5ns) and Low Power Consumption (<0.01µW Typ.). ESD immunity is higher than 1000V per Method 3015.7 of MIL-STD-883B. It’s avalable in the commercial temperature range.

■ HIGH SPEED:
   tPD = 0.3 ns (TYP.) at VCC = 5V
   tPD = 0.4 ns (TYP.) at VCC = 3.0V
■ LOW POWER DISSIPATION:
   ICC =1 µA (MAX.) at TA = 85 oC
■ LOW ”ON” RESISTANCE:
   RON = 4Ω (MAX.Ta=25oC) AT VCC = 5V
   RON = 6Ω (TYP.)AT VCC = 3.0V
■ WIDE OPERATING VOLTAGERANGE:
   VCC (OPR)= 1.8V to 5.5VSINGLE SUPPLY