Description
This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturingreproducibility.

Features
■ TYPICAL RDS(on) = 0.007 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ LOW GATE CHARGE 100 oC
■ APPLICATION ORIENTED CHARACTERIZATION
■ FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE

Applications
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC & DC-AC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc. ) INTERNAL SCHEMATIC DIAGRAM December 1997