Features
• Advanced diagnostic reporting via a serial peripheral interface (SPI): charge pump
undervoltage, overvoltage, and undervoltage on VPWR, short to ground and short
to VPWR for each output, open load, temperature warning and overtemperature
shutdown
• Thermal management: Excellent thermal resistance of <1.0 °C/W between junction and
case (exposed pad)
• Eight selectable slew rates via the SPI: 0.25 V/μs to more than 16 V/μs for EMI and
thermal performance optimization
• Four selectable current limits via the SPI: 5.4/7.0/8.8/10.7 A covering a wide range of
applications
• Extended high temperature operating range with current foldback while limiting the
current
• Three package sizes available in SOIC, PQFN and HVQFN to meet footprint and
application requirement
• Can be operated without SPI with default slew rate of 2.0 V/μs and a 7.0 A current limit
threshold
• Highly accurate real-time current feedback through a current mirror output signal with
less than 5.0 % error
• Drives inductive loads in a full H-bridge or half-bridge configuration
• Overvoltage protection places the load in high-side recirculation (braking) mode with
notification in H-bridge mode
• Wide operating range: 5.0 V to 28 V operation
• Low RDS(on) integrated MOSFETs: maximum of 235 mΩ (TJ = 150 °C) for each
MOSFET
• Internal protection for overtemperature, undervoltage, and short-circuit by signaling the
error condition and disabling the outputs
• I/O pins can withstand up to 36 V
• AEC-Q100 grade 1 qualified