SUMMARY DESCRIPTION
M58LW128 is a 128 Mbit (8Mb x16 or 4Mb x32) non-volatile memory that can be read, erased and reprogrammed. These operations can be per formed using a single low voltage (2.7V to 3.6V) core supply. On power-up the memory defaults to Read mode with an asynchronous bus where it can be read in the same way as a non-burst Flash memory.

FEATURES SUMMARY
■ WIDE DATA BUS for HIGH BANDWIDTH
    – M58LW128A: x16
    – M58LW128B: x16/x32
■ SUPPLY VOLTAGE
    – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations
    – VDDQ = 1.8 to VDD for I/O Buffers
■ SYNCHRONOUS/ASYNCHRONOUS READ
    – Synchronous Burst read
    – Pipelined Synchronous Burst Read
    – Asynchronous Random Read
    – Asynchronous Address Latch Controlled Read
    – Page Read
■ ACCESS TIME
    – Synchronous Burst Read up to 66MHz
    – Asynchronous Page Mode Read 150/25ns
    – Random Read 150ns
■ PROGRAMMING TIME
    – 16 Word or 8 Double-Word Write Buffer
    – 12µs Word effective programming time
■ 128 UNIFORM 64 KWord MEMORY BLOCKS
■ BLOCK PROTECTION/ UNPROTECTION
■ PROGRAM and ERASE SUSPEND
■ OTP SECURITY AREA
■ COMMON FLASH INTERFACE
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 0020h
    – Device Code M58LW128A: 8818h
    – Device Code M58LW128B: 8819h