DESCRIPTION
The M58BF008 is a family of 8 Mbit non-volatile Flash memories that can be erased electrically at the block level and programmed in-system. Family members are configured during product testing for a specific Synchronous or Asynchronous Write mode, a Burst default of Wrap or No-wrap and for Critical Word X = 3 or 4 and Burst Word Y = 1 or 2 latency times. The Main memory array matrix allows each of the 32 equal blocks of 256 Kbit to be erased separately and re-programmed without affecting other blocks. The memory features a 256 Kbit Overlay block having the same address space asthe first Main memory block. The Overlay block provides a secure storage area that is controlled by special Instructions and an external input. A separate supply VDDQ allows the Input/ Output signals to be at 3.3V levels, while the main supply VDD is 5V.

■ SUPPLY VOLTAGE
   – VDD = 5V Supply Voltage
   – VDDQ = 3.3V Input/Output Supply Voltage
   – Optional VPP = 12V for fast Program and Erase
■ CONFIGURABLE OPTIONS
   – Synchronous or Asynchronous write mode
   – Burst Wrap/No-wrap default
   – Critical Word X (3 or 4) and Burst Word Y (1 or 2) latency times
■ ACCESS TIME
   – Synchronous X-Y-Y-Y Burst Read up to 40MHz
   – Asynchronous Read: 100ns
■ PROGRAMMING TIME: 10µs typical
■ MEMORY BLOCKS
   – 32 equal Main blocks of 256 Kbit
   – One Overlay block of 256 Kbit
■ ELECTRONIC SIGNATURE
   – Manufacturer Code: 20h
   – Device Code: F0h
   – Version Code: 0-7h