1 Features
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• Radiation hardness assured AFE7950-SP:
– Single-event latch up (SEL): 70MeV-cm2/mg
– RLAT Total ionizing dose (TID): 100krad (Si)
• Radiation tolerant AFE7950-SEP:
– Single-event latch up (SEL): 43MeV-cm2/mg
– RLAT Total ionizing dose (TID): 30krad (Si)
• Four RF sampling 12GSPS TX DACs
• Six RF sampling 3GSPS RX ADCs
• Maximum RF signal bandwidth: 1200MHz (or 2400MHz for 2TX)
• RF frequency range:
– TX: 600MHz to 12GHz
– RX: 5MHz to 12GHz
• Digital Step Attenuators (DSA):
– TX: 40dB range, 0.125dB steps
– RX or FB: 25dB range, 0.5dB steps
• Single or dual-band DUC or DDCs for TX and RX
• SerDes data interface:
– 8 SerDes transceivers up to 24.75Gbps
– JESD204B/C subclass 1 compatible
• Package: 17mm × 17mm FCBGA, 0.8mm pitch
• Space screening and assurance:
– Meets ASTM E595 outgassing specification (AFE7950-SP, AFE7950-SEP)
– One fabrication, assembly, and test site
– Wafer lot traceability
– Extended product life cycle
– Radiation lot acceptance test (RLAT) (AFE7950-SP, AFE7950-SEP)
– Production burn-in (AFE7950-SP)
• This device contains non-encapsulated chip-caps with tin (Sn) finish of >97% purity. See reliability report for more information